Thin film transistor substrate and method of manufacturing the same
US8077268B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2008 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Mar 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/423
Abstract
A thin film transistor array substrate comprising a base substrate, a first wire on the base substrate, a first insulating layer on the base substrate to cover the first wire, a semiconductor layer on the first insulating layer, a second insulating layer on the first insulating layer on which the semiconductor layer is formed, and a second wire on the second insulating layer on the second insulating layer is provided, and a portion of the second wire makes contact with the semiconductor layer through the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.