Patent · US Active

Thin film transistor substrate and method of manufacturing the same

US8077268B2 · kind B2 · utility

1Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 17, 2008
Grant dateDec 13, 2011
Priority date
Expiry dateMar 5, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D86/423

Abstract

A thin film transistor array substrate comprising a base substrate, a first wire on the base substrate, a first insulating layer on the base substrate to cover the first wire, a semiconductor layer on the first insulating layer, a second insulating layer on the first insulating layer on which the semiconductor layer is formed, and a second wire on the second insulating layer on the second insulating layer is provided, and a portion of the second wire makes contact with the semiconductor layer through the contact hole.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.