Projection exposure method
US8077292B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2009 |
| Grant date | Dec 13, 2011 |
| Priority date | — |
| Expiry date | Jun 20, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03B27/72
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A projection exposure method that projects the shape of a hole onto a wafer by projecting a diffracted light, which is produced by applying light to a mask having a pattern for forming a hole pattern, onto the wafer through a projection optical system for exposure, wherein, in a plane substantially perpendicular to an optical axis, the light applied to the mask has a first intensity distribution in which the intensity is higher in the vicinity of eight apexes of an octagon centered at the optical axis than in other areas, the mask has a plurality of first opening patterns are arranged in a rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis, and a plurality of second opening patterns are arranged in a face-centered rectangular lattice configuration having sides parallel to diagonals of the octagon passing through the optical axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.