Patent · US Active

Moisture sensor

US8079248B2 · kind B2 · utility

2Cited by

7References

18Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Romano Hoofman · Leuven, BE
Julien Michelon · Leuven, BE

Key dates

Filing date	Oct 24, 2006
Grant date	Dec 20, 2011
Priority date	—
Expiry date	May 20, 2028

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T29/43
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A moisture sensor includes interdigitated first and second electrodes formed in trenches A porous low-k dielectric is provided between the electrodes. The electrodes are of Cu surrounded by a barrier layer to protect the Cu from corrosion. TiN may be used as barrier layer and selectively deposited barrier material such as CoWB, MoWB or NiMoP as barrier layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.