Low dielectric constant silicon coating, method for the preparation and application thereof to integrated circuits
US8080286B2 · kind B2 · utility
0Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2006 |
| Grant date | Dec 20, 2011 |
| Priority date | — |
| Expiry date | Feb 22, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention concerns a process for the preparation of a silicone coating of low dielectric constant, comprising the following essential steps: The invention deals also with a silicone coating obtained by this process and an integrated circuit comprising such a silicone coating as an electrical insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.