Semiconductor device manufacturing method and silicon oxide film forming method
US8080463B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2010 |
| Grant date | Dec 20, 2011 |
| Priority date | — |
| Expiry date | Jan 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.