Nonvolatile memory devices and methods of forming the same
US8080843B2 · kind B2 · utility
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3References
5Claims
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Assignee
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Key dates
| Filing date | Jun 3, 2011 |
| Grant date | Dec 20, 2011 |
| Priority date | — |
| Expiry date | Jun 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are nonvolatile memory devices and methods of forming nonvolatile memory devices. Nonvolatile memory devices include a device isolation layer that defines an active region in a substrate. Nonvolatile memory devices further include a first insulating layer, a nonconductive charge storage pattern, a second insulating layer and a control gate line that are sequentially disposed on the active region. The charge storage pattern includes a horizontal portion and a protrusion disposed on an upper portion of an edge of the horizontal portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.