Flash memory device and memory system including the same
US8081508B2 · kind B2 · utility
9Cited by
16References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2009 |
| Grant date | Dec 20, 2011 |
| Priority date | — |
| Expiry date | Mar 1, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3454
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a flash memory device. The flash memory device includes a memory cell array, and a voltage generator. The memory cell array is connected to a plurality of word lines. The voltage generator generates a program voltage which is supplied to a selected word line of the word lines and a pass voltage which is supplied to a non-selected word line of the word lines, in a program operation. The voltage generator varies a level of the pass voltage with a temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.