Method of manufacturing silicon carbide semiconductor device
US8084278B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2010 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Dec 7, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A wafer WF is mounted in a substrate holder, and the substrate holder is placed in a film forming furnace. The film forming furnace is evacuated by a vacuum pump through a gas discharge part to remove remaining oxygen as completely as possible. Then, a temperature in the film forming furnace is heated to a range of 800° C. to 950° C. under reduced pressure while an inert gas such as Ar or helium (He) is being introduced through a gas introduction part. When the temperature reaches this temperature range, an inflow of the inert gas is stopped. Vaporized ethanol is introduced as a source gas into the film forming furnace through the gas introduction part, thus forming a graphite film on an entire surface of the wafer WF.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.