Continuously optimized solar cell metallization design through feed-forward process
US8084293B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2010 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Apr 6, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created and imaging is used to determine the appropriate metallization layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.