Method for manufacturing thin film transistor
US8084307B2 · kind B2 · utility
56Cited by
2References
4Claims
0Family size
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Key dates
| Filing date | Nov 9, 2007 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Jan 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
A method for manufacturing a thin film transistor containing an channel layer 11 having indium oxide, including forming an indium oxide film as an channel layer and subjecting the formed indium oxide film to an annealing in an oxidizing atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.