Transistor devices and methods of making

US8084329B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• John C. Arnold · North Chatham, US
• Xuefeng Hua · Guilderland, US
• Rangarajan Jagannathan · Hopewell Junction, US
• Stefan Schmitz · Stuttgart, DE

Key dates

• Filing date: Jan 26, 2010
• Grant date: Dec 27, 2011
• Expiry date: Jan 26, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

In an embodiment, a method of fabricating a transistor device comprises: providing a semiconductor topography comprising a gate conductor disposed above a semiconductor substrate between a pair of dielectric spacers; anisotropically etching exposed regions of the semiconductor substrate on opposite sides of the dielectric spacers to form recessed regions in the substrate; oxidizing exposed surfaces of the substrate in the recessed regions to form an oxide thereon; removing the oxide from bottoms of the recessed regions while retaining the oxide upon sidewalls of the recessed regions; and isotropically etching the substrate such that the recessed regions undercut the pair of dielectric spacers.