Modified DARC stack for resist patterning
US8084366B2 · kind B2 · utility
2Cited by
5References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2008 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Oct 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a device includes forming a device layer, forming an organic hard mask layer over the device layer, forming a first oxide hard mask layer over the organic hard mask layer, forming a DARC layer over the first oxide hard mask layer, forming a photoresist layer over the DARC layer, patterning the photoresist layer to form a photoresist pattern, and transferring the photoresist pattern to the device layer using the DARC layer, the first oxide hard mask layer and the organic hard mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.