Patent · US Active

Semiconductor device and manufacturing method thereof

US8084794B2 · kind B2 · utility

3Cited by

1References

20Claims

0Family size

Assignee

FUJITSU LIMITED · JP

Inventors

Yoichi Kamada · Kawasaki, JP
Naoya Okamoto · Yokohama, JP

Key dates

Filing date	Aug 13, 2009
Grant date	Dec 27, 2011
Priority date	—
Expiry date	Mar 2, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3011
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a first wiring extending in a first direction and a second wiring extending in a second direction which crosses the first direction and being disposed with a space interposed between the first wiring and the second wiring, and including a tantalum layer, a tantalum nitride layer formed over the tantalum layer, and a metal layer formed over the tantalum nitride layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.