Power devices with super junctions and associated methods manufacturing
US8084811B2 · kind B2 · utility
4Cited by
23References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2009 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Mar 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Power devices with super junctions and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a power device includes forming an epitaxial layer on a substrate material and forming a trench in the epitaxial layer. The trench has a first sidewall, a second sidewall, and a bottom between the first and second sidewalls. The method also includes forming an insulation material on at least one of the first and second sidewalls of the trench and diffusing a dopant into the epitaxial layer via at least one of the first and second sidewalls of the trench via the insulation material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.