Electrostatic discharge protection circuit, manufacturing method thereof and liquid crystal display device having the same
US8085352B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2008 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | May 12, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136204
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A width and a length of the electrostatic discharge (ESD) protection circuit are reduced by changing a connection structure of the electrostatic discharge protection circuit. The ESD protection circuit includes a plurality of gate electrodes disposed between odd signal lines and even signal lines adjacent to the odd signal lines among the signal lines; source/drain electrode pairs each disposed on a respective one of the gate electrodes to form a plurality of transistors; and connection nodes parallel to the source/drain electrode pairs, each connection node adjacent to a respective one of the source/drain electrodes pairs and on a respective one of the gate electrodes, wherein each of the connection nodes is directly connected to the source/drain electrode pair of an adjacent transistor and the gate electrode formed below the source/drain electrode through a contact part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.