Nonvolatile semiconductor memory device and method of data write/data erase therein
US8085577B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2010 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Jul 24, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device comprises: a plurality of first lines; a plurality of second lines; a plurality of memory cells each disposed at each of crossing-points of the first lines and the second lines and each comprising a variable resistor and a bi-directional diode; and a voltage control circuit configured to control a voltage of selected one of the first lines, unselected ones of the first lines, selected one of the second lines, and unselected ones of the second lines, respectively. The variable resistor is configured to change its resistance value depending on a polarity of a voltage applied thereto. The voltage control circuit is configured to apply a voltage pulse to the selected one of the first lines and to connect a capacitor of a certain capacitance to one end of the selected one of the second lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.