Vertical cavity surface emitting laser and method of manufacturing the same
US8085827B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2009 |
| Grant date | Dec 27, 2011 |
| Priority date | — |
| Expiry date | Jun 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2086
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.