Warm-white light-emitting diode and its phosphor powder
US8088303B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 11, 2009 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | Dec 24, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B20/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention discloses a warm-white-light emitting diode has the substrate of indium gallium nitride (InGaN) heterojunction containing a large amount of quantum wells and having a light conversion polymer layer, characterized by that the light conversion polymer layer is uniform in concentration, the light-emitting surface and edges of the indium gallium nitride heterojunction are covered with a thermosetting polymer, and the light conversion polymer layer contains some fluorescent powders, which are formed as at least two particle layers in the light conversion polymer layer to ensure the light transmitted reaching 20% of the first-order blue light and 70˜80% of the second-order orange-yellow light from the indium gallium nitride heterojunction. The present invention also discloses a fluorescent powder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.