Thin-filmed field effect transistor and making method
US8088642B2 · kind B2 · utility
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8References
3Claims
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Key dates
| Filing date | Jan 8, 2009 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | May 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/113
Abstract
In a thin-film field effect transistor with a MIS structure, the materials of which the semiconductor and insulating layers are made are polymers which are dissolvable in organic solvents and have a weight average molecular weight of more than 2,000 to 1,000,000. Use of polymers for both the semiconductor layer and insulating layer of TFT eliminates such treatments as patterning and etching using photoresists in the prior art circuit-forming technology, reduces the probability of TFT defects and achieves a reduction of TFT manufacture cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.