Method for manufacturing bonded substrate with sandblast treatment
US8088670B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2008 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | Apr 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and after mounted by roughening a back surface of the bonded substrate (corresponding to a back surface of the insulator substrate) and additionally whose front surface can be easily identified like a process of a silicon semiconductor wafer in case of the bonded substrate using a transparent insulator substrate as a handle wafer. There is provided a method for manufacturing a bonded substrate in which an insulator substrate is used as a handle wafer and a donor wafer is bonded to a front surface of the insulator substrate, the method comprises at least that a sandblast treatment is performed with respect to a back surface of the insulator substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.