Method of remedying deterioration of insulating film
US8088686B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2007 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | Apr 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02203
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of remedying deterioration of an insulating film which, during the remedial treatment of an insulating film deteriorated by plasma treatment, does not leave residual remedial agent on the wiring material such as the copper wiring layer, can be conducted using a dry process, and exhibits excellent applicability to mass production. The insulating film that has been deteriorated by plasma treatment is brought into contact with a remedial agent composed of a compound with a molecular structure having at least one of a nitro group and a carbonyl group, and at least one of a hydrocarbon group and a hydrogen group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.