Organic thin film transistors

US8089065B2 · kind B2 · utility

Assignee

• Cambridge Display Technology Limited · GB

Inventors

• Gregory Whiting · Menlo Park, US
• Jonathan Halls · Cambridge, GB

Key dates

• Filing date: Apr 3, 2008
• Grant date: Jan 3, 2012
• Expiry date: Apr 3, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K71/233

Abstract

A method of forming an organic thin film transistor comprising: providing a structure comprising source and drain electrodes with a channel region therebetween, a gate electrode, and a dielectric layer disposed between the source and drain electrodes and the gate electrode; and patterning the dielectric layer using the source and drain electrodes as a mask to form a region of dielectric material in the channel region which is thinner than regions of dielectric material adjacent the channel region.