Continuously variable graded artificial dielectrics using nanostructures
US8089152B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 31, 2006 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | Sep 26, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249924
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Graded artificial dielectrics using nanostructures, such as nanowires, are disclosed. The graded artificial dielectric includes a material (typically a dielectric) with a plurality of nanostructures, such as nanowires, embedded within the dielectric material. One or more characteristics of the nanostructures are spatially varied from a first region within the dielectric to a second region within the dielectric to produce permittivity of the graded artificial dielectric that is spatially varied. The characteristics that can be varied include, but are not limited to, nanostructure density, nanostructure length, nanostructure aspect ratio, nanostructure oxide ratio, and nanostructure alignment. Methods of producing graded artificial dielectrics are also provided. A wide range of electronic devices such as antennas can use graded artificial dielectrics with nanostructures to improve performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.