High velocity method for depositing diamond films from a gaseous phase in SHF discharge plasma and a plasma reactor for carrying out said method
US8091506B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2010 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Feb 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32431
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to carbon deposition by decomposing gaseous compounds with the aid of the SHF discharge plasma. Said invention ensures a high speed deposition of the high quality diamond films (having a loss-tangent angle δ equal to or less than 3×10−5 on supports whose diameter is equal to or higher than 100 mm. For this purpose, a SHF discharge is initiated in a gas mixture which is arranged in a reaction chamber having a frequency f which is many times higher than a commonly used frequency of 2.45 GHz, for example 30 GHz. In order to localize the plasma, a standing wave is formed near the carrier and plasma layers are formed in the antinodes thereof in such a way that the sizes thereof are adjustable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.