Deposition apparatus
US8092606B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2008 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Sep 12, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45519
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.