Method for forming semiconductor thin film and method for manufacturing electronic device
US8093109B2 · kind B2 · utility
2Cited by
2References
10Claims
0Family size
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Key dates
| Filing date | Sep 24, 2009 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Feb 20, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor thin film includes the steps of applying an inorganic semiconductor fine particle-dispersion solution on a substrate and drying the coating to form a semiconductor fine particle layer, and immersing the semiconductor fine particle layer in a solution to form a semiconductor thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.