Method for manufacturing thin film transistor
US8093110B2 · kind B2 · utility
1Cited by
3References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 3, 2010 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Aug 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A method for manufacturing a thin film transistor (TFT) is disclosed. The method is achieved by forming and defining a source and a drain of a thin film transistor through two lithographic processes cycles so that the channel length (L) of the thin film transistor can be reduced to 1.5 to 4.0 μm. Besides, the Ion current of the thin film transistor is increased as the channel length (L) is decreased. Therefore, the component area of the thin film transistor is decreased as the channel width (W) is decreased. Thus, the aperture ratio of the TFT-LCD can be increased due to the decreased component area of the thin film transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.