Method for manufacturing display device
US8093112B2 · kind B2 · utility
13Cited by
51References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2008 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Mar 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
Abstract
A method for manufacturing display devices including thin film transistors with high reliability in a high yield is provided. A gate insulating film is formed over a gate electrode; a microcrystalline semiconductor is formed over the gate insulating film; the microcrystalline semiconductor film is irradiated with a laser beam from the surface side thereof, whereby the crystallinity of the microcrystalline semiconductor film is improved. Then, a thin film transistor is formed using the microcrystalline semiconductor film whose crystallinity is improved. Further, a display device including the thin film transistor is manufactured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.