CMOS microelectromechanical system (MEMS) device and fabrication method thereof
US8093119B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2009 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Oct 27, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0828
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for fabricating the MEMS device includes providing a substrate. Then, a structural dielectric layer is formed over the substrate at a first side, wherein a diaphragm is embedded in the structural dielectric layer. The substrate is patterned from a second side to form a cavity in corresponding to the diaphragm and a plurality of venting holes in the substrate. An isotropic etching process is performed from the first side and the second side of the substrate via vent holes to remove a dielectric portion of the structural dielectric layer for exposing a central portion of the diaphragm while an end portion is held by a residue portion of the structural dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.