Method for manufacturing semiconductor device
US8093156B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2007 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Dec 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a method for manufacturing a semiconductor device, which the method is capable of efficient mass production of high-performance semiconductor devices by, upon manufacture of a semiconductor device, eliminating unwanted features (e.g., side lobes) created together with a resist pattern by thickening the resist pattern, to reduce the burden in designing photomasks and to increase depth of focus. The method of the present invention for manufacturing a semiconductor device includes at least: forming a resist pattern on a work surface and applying over a surface of the resist pattern a resist pattern thickening material to thereby thicken the resist pattern to eliminate an unwanted feature created together with the resist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.