Nitride semiconductor light emitting device
US8093606B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2006 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Oct 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a nitride semiconductor light emitting device having a light reflection layer capable of preventing reflectivity from lowering and luminance from lowering due to deterioration of quality of an active layer. A nitride semiconductor laser includes at least a light emitting layer forming portion (3) provided on a first light reflection layer (2) provided on a substrate (1). The first light reflection layer (2) is formed with laminating a low refractivity layer (21) and a high refractivity layer (22) which have a different refractivity from each other, and the low refractivity layer (21) of the first light reflection layer is formed with a single layer structure of an AlxGa1−xN layer (0≦x≦1), and the high refractivity layer (22) of the first light reflection layer is formed with a multi layer structure formed by laminating alternately an AlyGa1−yN layer (0≦y≦0.5 and y<x) or an IntGa1−tN layer (0<t≦0.5) and an InuGa1−uN layer (0<u≦1 and t<u).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.