Semiconductor device and lateral diffused metal-oxide-semiconductor transistor
US8093630B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2009 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Jun 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
The invention provides a semiconductor device and a lateral diffused metal-oxide-semiconductor transistor. The semiconductor device includes a substrate having a first conductive type. A gate is disposed on the substrate. A source doped region is formed in the substrate, neighboring with a first side of the gate, wherein the source doped region has a second conductive type different from the first conductive type. A drain doped region is formed in the substrate, neighboring with a second side opposite to the first side of the gate. The drain doped region is constructed by a plurality of first doped regions with the first conductive type and a plurality of second doped regions with the second conductive type, wherein the first doped regions and the second doped regions are alternatively arranged.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.