Patent · US Active

Vertical Hall Effect sensor

US8093891B2 · kind B2 · utility

12Cited by

4References

18Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Thomas Rocznik · Mountain View, US
Christoph Lang · Palo Alto, US
Sam Kavusi · Menlo Park, US

Key dates

Filing date	Mar 2, 2009
Grant date	Jan 10, 2012
Priority date	—
Expiry date	Jan 19, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG01R33/077
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A complimentary metal oxide semiconductor (CMOS) sensor system in one embodiment includes a doped well extending along a first axis of a doped substrate, a first electrical contact positioned within the doped well, a second electrical contact positioned within the doped well and spaced apart from the first electrical contact along the first axis, a third electrical contact positioned within the doped well and located between the first electrical contact and the second electrical contact along the first axis, and a fourth electrical contact electrically coupled to the doped well at a location of the doped well below the third electrical contact.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.