Deep sub-micron MOS preamplifier with thick-oxide input stage transistor
US8094846B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2007 |
| Grant date | Jan 10, 2012 |
| Priority date | — |
| Expiry date | Nov 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/222
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a condenser microphone assembly comprising a condenser microphone transducer comprising adjacently positioned diaphragm and back-plate members having an air gap there between. Moreover, the assembly comprises a deep sub-micron MOS integrated circuit die comprising a preamplifier comprising a first signal input terminal for receipt of electrical signals generated by the condenser microphone transducer. The first signal input terminal is operatively coupled to an input stage of the preamplifier, said input stage comprising a thick-oxide transistor. The present invention further relates to a deep sub-micron MOS integrated circuit die comprising a thick-oxide transistor-based preamplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.