Electroconductive tin oxide having high mobility and low electron concentration
US8097302B2 · kind B2 · utility
2Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2010 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | Jan 8, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Tin oxide having high mobility and a low electron concentration, and methods for producing layers of the tin oxide layers on a substrate by atmospheric pressure chemical vapor deposition (APCVD) are disclosed. The tin oxide may undoped polycrystalline n-type tin oxide or it may be doped polycrystalline p-type tin oxide. When the layer of tin oxide is formed on a crystalline substrate, substantially crystalline tin oxide is formed. Dopant precursors for producing doped p-type tin oxide are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.