Method for manufacturing semiconductor device
US8097501B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2010 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | Mar 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device, includes: forming a first-conductivity-type semiconductor region on a semiconductor layer; forming a mask member on the first-conductivity-type semiconductor region; selectively forming an opening in the mask member; etching the first-conductivity-type semiconductor region exposed to the opening to form a trench having a larger diameter than the opening and an eaves-like mask projected above the trench and made of the mask member; and forming a second-conductivity-type semiconductor region in the trench below the eaves-like mask by epitaxial growth to form a structure section in which the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region are alternately repeated in a direction generally parallel to a major surface of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.