MOSFET having a JFET embedded as a body diode
US8097512B2 · kind B2 · utility
11Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2008 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | May 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A field effect transistor, in accordance with one embodiment, includes a metal-oxide-semiconductor field effect transistor (MOSFET) having a junction field effect transistor (JFET) embedded as a body diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.