Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure
US8097802B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2009 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | Apr 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/8556
Abstract
A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A8TMy1TMy2 . . . TMynMzX46-y-y- . . . -y-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM1, TM2, and TMn are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y1, y2, yn and Z are actual compositions of TM1, TM2, TMn, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8·qA−|Δq1|y1−|Δq2|y2− . . . −|Δqn|yn, wherein qA is a charge state of A, and wherein Δq1, Δq2, Δqn are, respectively, the nominal charge state of the first, second, and n-th TM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.