Thin film transistor substrate and a fabricating method thereof
US8097881B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2009 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | Nov 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
An oxide semiconductor thin film transistor substrate includes a gate line and a gate electrode disposed on an insulating substrate, an oxide semiconductor pattern disposed adjacent to the gate electrode, a data line electrically insulated from the gate line, the data line and the gate line defining a display region, a first opening exposing a surface of the data line, a second opening exposing a surface of the oxide semiconductor pattern, and a drain electrode disposed on the first opening and a drain electrode pad, the drain electrode extending from the first opening to the second opening and electrically connecting the drain electrode pad and the oxide semiconductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.