High-efficiency light-emitting device and manufacturing method thereof

US8097897B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Chia-Ming Chuang · Hsinchu, TW
• Donald Tai-Chan Huo · Hsinchu, TW
• Chia-Chen Chang · Rockville, US
• Tzu-Ling Yang · Hsinchu, TW
• Chen Ou · Hsinchu, TW

Key dates

• Filing date: Mar 4, 2008
• Grant date: Jan 17, 2012
• Expiry date: Dec 23, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/82

Abstract

This invention provides a high-efficiency light-emitting device and the manufacturing method thereof. The high-efficiency light-emitting device includes a substrate; a reflective layer; a bonding layer; a first semiconductor layer; an active layer; and a second semiconductor layer formed on the active layer. The second semiconductor layer includes a first surface having a first lower region and a first higher region.