Highly sensitive photo-sensing element and photo-sensing device using the same
US8097927B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2007 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | May 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/026
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides an image display unit integrated with a photo-sensor, comprising a photo-sensing element with high sensitivity and low noise and a polycrystalline silicon TFT prepared at the same time on an insulating substrate using planer process. After a first electrode 11 and a second electrode 12 of the photo-sensing element are made of polycrystalline silicon film, a light receiving layer (photoelectric conversion layer) 13 of the photo-sensing element is prepared by amorphous silicon film on upper layer. In this case, a polycrystalline silicon TFT is prepared at the same time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.