Spin-torque bit cell with unpinned reference layer and unidirectional write current
US8098538B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2011 |
| Grant date | Jan 17, 2012 |
| Priority date | — |
| Expiry date | May 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/329
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.