Method for producing a monocrystalline or polycrystalline semiconductor material

US8101019B2 · kind B2 · utility

Assignee

• Schott AG · DE

Inventors

• Uwe Sahr · Nuremberg, DE
• Matthias Mueller · Harsefeld, DE
• Ingo Schwirtlich · Miltenberg, DE
• Frank-Thomas Lentes · Bingen, DE
• Frank Buellesfeld · Kriftel, DE

Key dates

• Filing date: Dec 15, 2008
• Grant date: Jan 24, 2012
• Expiry date: Jul 24, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T117/10
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In the method of making a monocrystalline or polycrystalline semiconductor material semiconductor raw material is introduced into a melting crucible and directionally solidified using a vertical gradient freeze method. The molten material trickles downward, so that the raw material that has not yet melted gradually slumps in the melting crucible. The semiconductor raw material is replenished from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted to at least partly compensate for shrinkage of the raw material and to raise the filling level. To reduce the melting time and influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated to a temperature below its melting temperature and introduced into the crucible in the heated state.