Method of forming programmable anti-fuse element
US8101471B2 · kind B2 · utility
6Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2008 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Feb 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programmable anti-fuse element includes a substrate (224), an N-well (426) in the substrate, an electrically insulating layer (427) over the N-well, and a gate electrode (430) over the electrically insulating layer. The gate electrode has n-type doping so that the N-well is able to substantially contain within its boundaries a current generated following a programming event of the programmable anti-fuse element. In the same or another embodiment, a twice-programmable fuse element (100) includes a metal gate fuse (110) and an oxide anti-fuse (120) such as the programmable anti-fuse element just described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.