Bonded intermediate substrate and method of making same
US8101498B2 · kind B2 · utility
23Cited by
51References
13Claims
0Family size
Inventors
Key dates
| Filing date | Apr 21, 2006 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Feb 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An intermediate substrate includes a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a III-nitride semiconductor layer. The handle substrate may be a metal or metal alloy substrate, such as a molybdenum or molybdenum alloy substrate, while the thin layer may be a sapphire layer. A method of making the intermediate substrate includes forming a weak interface in the source substrate, bonding the source substrate to the handle substrate, and exfoliating the thin layer from the source substrate such that the thin layer remains bonded to the handle substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.