Semiconductor device with (110)-oriented silicon
US8101500B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2008 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Nov 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device on a heavily doped P-type (110) semiconductor layer over a metal substrate includes providing a first support substrate and forming a P-type heavily doped (110) silicon layer overlying the first support substrate. At least a top layer of the first support substrate is removable by a selective etching process with respect to the P-type heavily doped (110) silicon layer. A vertical semiconductor device structure is formed in and over the (110) silicon layer. The vertical device structure includes a top metal layer and is characterized by a current conduction in a <110> direction. The method includes bonding a second support substrate to the top metal layer and removing the first support substrate using a mechanical grinding and a selective etching process to expose a surface of the P-type heavily doped (110) silicon layer and to allow a metal layer to be formed on the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.