Thin film transistor having a plurality of carbon nanotubes
US8101953B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 2, 2009 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Jan 30, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer includes at least two stacked carbon nanotube films. Each carbon nanotube film includes an amount of carbon nanotubes. At least a part of the carbon nanotubes of each carbon nanotube film are aligned along a direction from the source electrode to the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.