Semiconductor light-emitting element and process for production thereof
US8101964B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2009 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | May 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
Abstract
The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.