Nonvolatile resistive memories having scalable two-terminal nanotube switches
US8102018B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2007 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | May 30, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile resistive memory is provided. The memory includes at least one non-volatile memory cell and selection circuitry. Each memory cell has a two-terminal nanotube switching device having and a nanotube fabric article disposed between and in electrical communication with two conductive terminals. Selection circuitry is operable to select the two-terminal nanotube switching device for read and write operations. Write control circuitry, responsive to a control signal, supplies write signals to a selected memory cell to induce a change in the resistance of the nanotube fabric article, the resistance corresponding to an informational state of the memory cell. Resistance sensing circuitry in communication with a selected nonvolatile memory cell, senses the resistance of the nanotube fabric article and provides the control signal to the write control circuitry. Read circuitry reads the corresponding informational state of the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.