Patent · US Active

Passive part

US8102222B2 · kind B2 · utility

1Cited by
5References
3Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 13, 2008
Grant dateJan 24, 2012
Priority date
Expiry dateOct 3, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03H2001/0085
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A first passive part forms a second parallel resonance circuit having a resonance frequency near the passing band among a first to a third parallel resonance circuit as follows. That is, the second parallel resonance circuit is formed at a position farthest from a first shield electrode and farthest from a second shield electrode in a region sandwiched by the first shield electrode and the second shield electrode in a dielectric substrate (in this example, on the main surface of a seventh dielectric layer and the main surface of an eighth dielectric layer located at a center portion in the layering direction of the region).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.